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Applied Physics Letters

Volumn 97, Issue 18, 2010, Pages

Magnetocurrent of ballistically injected electrons in insulating silicon

(2) Jang, Hyuk Jae a,b Appelbaum, Ian a

a Bldg 142 (United States)

b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE; CHARGE TRANSPORT; INJECTED ELECTRONS; MAGNETIC FIELD ANGLE; MAGNETOCURRENT; MAGNETORESISTANCE MEASUREMENTS; NON EQUILIBRIUM; SPACE CHARGE EFFECTS; THREE-DIMENSIONAL ELECTRONS; UNDOPED SILICON;

ELECTRIC RESISTANCE; ELECTRON GAS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78649244051 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3511681 Document Type: Article

Times cited : (7)

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