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Physical Review Letters

Volumn 106, Issue 21, 2011, Pages

Spin-polarized transient electron trapping in phosphorus-doped silicon

(3) Lu, Yuan a,b Li, Jing a Appelbaum, Ian a

a Bldg 142 (United States)

b INSTITUT JEAN LAMOUR (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DENSITY DEPENDENCE; ELECTRON SPIN PRECESSION; ELECTRON TRAPPING; EXPERIMENTAL EVIDENCE; IMPURITY TRAPS; NUMERICAL MODELS; PHOSPHORUS-DOPED; QUANTUM INFORMATION APPLICATIONS; QUANTUM REGIMES; RE-EMISSION; SHORT TIME SCALE; SPIN INTERACTION; SPIN TRANSPORT; SPIN-POLARIZED; TIME-SCALES;

IMPURITIES; POWER QUALITY; QUANTUM CHEMISTRY; QUANTUM OPTICS;

PHOSPHORUS;

EID: 79960619291 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.106.217202 Document Type: Article

Times cited : (18)

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