Electrical spin injection in a ferromagnetic semiconductor heterostructure

Nature

Volumn 402, Issue 6763, 1999, Pages 790-792

  Ohno, Y ^a   Young, D K ^b   Beschoten, B ^b   Matsukura, F ^a   Ohno, H ^a   Awschalom, D D ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIAL; GALLIUM ARSENIDE; MANGANESE;

ARTICLE; DEVICE; ELECTRON SPIN RESONANCE; MAGNETISM; PRIORITY JOURNAL; QUANTUM MECHANICS; SEMICONDUCTOR; X RAY DIFFRACTION;

EID: 0033576573     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/45509     Document Type: Article

References (16)

1. Awschalom, D. D. & Kikkawa, J. M. Electron spin and optical coherence in semiconductors. Phys. Today 52, 33-38 (1999).
2. Prinz, G. A. Magnetoelectronics. Science 282, 1660-1663 (1998).
3. Kikkawa, J. M. & Awschalom, D. D. Resonant spin amplification in n-type GaAs. Phys. Rev. Lett. 80, 4313-4316 (1998).
4. Gupta, J. A., Awschalom, D. D., Peng, X. & Alivisatos, A. P. Spin coherence in semiconductor quantum dots. Phys. Rev. B 59, 10421-10424 (1999).
5. DiVincenzo, D. P. Quantum computation. Science 270, 255-261 (1995).
6. Loss, D. & DiVincenzo, D. P. Quantum computation with quantum dots. Phys. Rev. A 57, 120-126 (1998).
7. Kikkawa, J. M. & Awschalom, D. D. Lateral drag of spin coherence in gallium arsenide. Nature 397, 139-141 (1999).
8. Monzon, F. G. & Roukes, M. L. Spin injection and the local hall effect in InAs quantum wells. J. Mag. Magn. Mater. 198, 632-635 (1999).
9. Hammar, P. R. et al. Observation of the spin injection at a ferromagnetic-semiconductor interface. Phys. Rev. Lett, 83, 203-206 (1999).
10. Ohno, H. Making nonmagnetic semiconductors ferromagnetic. Science 281, 951-955 (1998).
11. Ohno, H. et al. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs. Appl. Phys. Lett. 69, 363-365 (1996).
12. Matsukara, F., Ohno, H., Shen, A. & Sugawara, Y. Transport properties and origin of ferromagnetism in (Ga,Mn)As. Phys. Rev. B 57, 2037-2040 (1998).
13. Hägele, D., Oestreich, M., Rühle, W. W., Nestle, N. & Eberl, K. Spin transport in GaAs. Appl. Phys. Lett. 73, 1580-1582 (1998).
14. xAs. Phys. Rev. Lett. 83, 3073-3076 (1999).
15. xAs. Phys. Rev. B 56, 13103-13112 (1997).
16. Uenoyama, T. & Sham, L. J. Hole relaxation and luminescence polarization in doped and undoped quantum wells. Phys. Rev. Lett. 64, 3070-3073 (1990).