Tunneling characteristics across nanoscale metal ferric junction lines into doped Si

Applied Physics Letters

Volumn 92, Issue 15, 2008, Pages

  Wang, Keqiang ^a,b   Stehlik, Jiri ^a   Wang, Jian Qing ^a  

^a BINGHAMTON UNIVERSITY   (United States)

^b ZHONGKAI UNIVERSITY OF AGRICULTURE AND ENGINEERING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTANCE; SILICON; TEMPERATURE DISTRIBUTION;

TEMPERATURE DEPENDENCES; THERMAL ACTIVATION;

HETEROJUNCTIONS;

EID: 42349100719     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2912530     Document Type: Article

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