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Journal of Materials Science: Materials in Electronics

Volumn 16, Issue 3, 2005, Pages 131-133

Spin-valve effect in an FM/Si/FM junction

(6) Lee, K I a,b Lee, H J b,c Chang, J Y b Han, S H b Kim, Y K c Lee, Woo Young a

a Yonsei University (South Korea)

b Korea Institute of Science and Technology (South Korea)

c Korea University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; FERROMAGNETIC MATERIALS; IRON COMPOUNDS; MAGNETIC FIELDS; MAGNETIZATION; MAGNETORESISTANCE; MAGNETRON SPUTTERING; OHMIC CONTACTS; OXIDATION; REACTIVE ION ETCHING; SEMICONDUCTING SILICON;

FERROMAGNETIC CONTACTS; SPIN VALVE EFFECT;

SEMICONDUCTOR JUNCTIONS;

EID: 15344343759 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1007/s10854-005-6590-9 Document Type: Article

Times cited : (4)

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