A Haynes-Shockley experiment for spin-polarized electron transport in silicon

Solid-State Electronics

Volumn 53, Issue 12, 2009, Pages 1242-1245

  Appelbaum, Ian ^a  

^a Bldg 142   (United States)

Author keywords

Diffusion; Electron spin; Mobility; Spin lifetime; Spin polarization; Spin transport

Indexed keywords

ALTERNATIVE STATE; DEVICE-SCALING; DIFFUSION ELECTRON; ELECTRON MAGNETIC MOMENT; ELECTRON SPIN; ELECTRON TRANSPORT; NEW AGE; SOLID STATE ELECTRONICS; SPIN LIFETIMES; SPIN TRANSPORT; SPIN-POLARIZED ELECTRON TRANSPORT; TERMINAL DEVICES; TIME-OF-FLIGHT TECHNIQUES;

ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; MAGNETIC MOMENTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SPIN POLARIZATION;

SPIN DYNAMICS;

EID: 71649091695     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.09.012     Document Type: Article

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