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Physical Review Letters

Volumn 102, Issue 3, 2009, Pages

Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor

(7) Tran, M a,b Jaffres H a,b Deranlot, C a,b George, J M a,b Fert, A a Miard, A a Lemaitre A a

a CNRS (France)

b UNIVERSITÉ PARIS SACLAY (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION LAYERS; ELECTRICAL DETECTIONS; FERROMAGNETIC CONTACTS; LOCALIZED STATE; SEQUENTIAL TUNNELING; SPIN INJECTIONS; SPIN LIFETIMES; SPIN-ACCUMULATIONS; SPIN-POLARIZED; SPIN-POLARIZED CARRIERS; THEORETICAL PREDICTIONS; TRANSVERSE MAGNETIC FIELDS; TUNNELING TIME; VOLTAGE DROPS;

CIVIL AVIATION; MAGNETIC FIELDS; SEMICONDUCTOR JUNCTIONS; TUNNEL JUNCTIONS;

SPIN DYNAMICS;

EID: 60149094046 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.102.036601 Document Type: Article

Times cited : (220)

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