Spin-valve effects in nickel/silicon/nickel junctions

IEEE Transactions on Magnetics

Volumn 32, Issue 5 PART 2, 1996, Pages 4707-4709

  Jia, Y Q ^a   Shi, Rick C ^a   Chou, Stephen Y ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ELECTRIC CONTACTS; ELECTRODES; FABRICATION; MAGNETIC DEVICES; MAGNETIC VARIABLES MEASUREMENT; MAGNETIZATION; MAGNETORESISTANCE; MODELS; NICKEL; SCHOTTKY BARRIER DIODES; SILICON;

LENGTH TO WIDTH RATIO; MAGNETOSTATIC INTERACTION; NICKEL SILICON NICKEL JUNCTIONS; PLANAR SPIN VALVE DEVICE; SCHOTTKY CONTACT; SHARP MAGNETORESISTANCE RESPONSE; SINGLE DOMAIN MAGNETIZATION; SPIN VALVE EFFECTS; SWITCHING FIELD;

SEMICONDUCTOR JUNCTIONS;

EID: 0030246383     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.539125     Document Type: Article

References (8)

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6. S.Y. Chou, unpublished, January 1995.
7. M.S. Wei and S.Y. Chou, "Size effect on switching field of isolated and interactive arrays of nanoscale single-domain Ni bars fabricated using electron-beam lithography," J. Appl. Phys. Vol. 76, pp. 6679-6681, November 1994.
8. L. Kong and S.Y. Chou, "Effects of bar length on switching field of nickel and cobalt bars fabricated using nanolithography," to be published in J. Appl. Phys. 1996.