Electrical detection of spin accumulation in a p-type GaAs quantum well

Physical Review Letters

Volumn 90, Issue 16, 2003, Pages

  Mattana, R ^a,b   George, J M ^a,b   Jaffres H ^a,b   Nguyen Van Dau, F ^a,b   Fert, A ^a,b   Lepine B ^a   Guivarc'h, A ^a   Jezequel G ^a  

^a CNRS   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; MAGNETIZATION; POLARIZATION; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE;

CHEMICAL POTENTIAL; ELECTRICAL DETECTION; GALLIUM MANGANESE ARSENIDE; SPIN ACCUMULATION; SPIN POLARIZED CURRENT; SPIN RELAXATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037526651     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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