High current gain silicon-based spin transistor

Journal of Physics D: Applied Physics

Volumn 36, Issue 2, 2003, Pages 81-87

  Dennis, C L ^a   Sirisathitkul, C ^a,d   Ensell, G J ^b   Gregg, J F ^a   Thompson, S M ^c  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^c UNIVERSITY OF YORK   (United Kingdom)

^d WALAILAK UNIVERSITY   (Thailand)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC CURRENTS; ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; GAIN MEASUREMENT; SEMICONDUCTING SILICON; THERMAL EFFECTS;

BIPOLAR JUNCTION TRANSISTOR; COLLECTOR EFFICIENCY; FERROMAGNETIC COLLECTOR; FERROMAGNETIC EMITTER; MAGNETOCURRENT; SILICON BASED SPIN TRANSISTOR; SPIN POLARIZED BASE DIFFUSION CURRENT; TUNNEL INJECTING CARRIERS;

BIPOLAR TRANSISTORS;

EID: 0037458137     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/2/303     Document Type: Article

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