Electrical spin-injection into silicon from a ferromagnetic metal/tunnel barrier contact

Nature Physics

Volumn 3, Issue 8, 2007, Pages 542-546

  Jonker, Berend T ^a   Kioseoglou, George ^a   Hanbicki, Aubrey T ^a   Li, Connie H ^a   Thompson, Phillip E ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CMOS INTEGRATED CIRCUITS; ELECTRONS; ELECTROSPINNING; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; IRON; LITHOGRAPHY; MAGNETIC MOMENTS; MOS DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON COMPOUNDS; SPIN POLARIZATION;

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; ELECTRICAL SPIN INJECTION; ELECTRON SPIN POLARIZATION; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; RADIATIVE RECOMBINATION; SEMICONDUCTOR INDUSTRY; SPIN-POLARIZED CARRIERS; SPIN-POLARIZED ELECTRONS;

SEMICONDUCTING SILICON;

EID: 34547613905     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/nphys673     Document Type: Article

References (30)

1. International Technology Roadmap far Semiconductors, 2005 Edition, http://www.itrs.net/reports.html. See Executive Summary and Emerging Research Devices.
2. Wolf, S. A. et al. Spintronics: A spin based electronics vision for the future. Science 294, 1448-1495 (2001).
3. Zutic, I., Fabian, J. & Das Sarma, S. Spintronics: Fundamentals and applications. Rev. Mod. Phys. 76, 323-410 (2004).
4. Jonker, B. T. & Flatte, M. E. in Nanomagnetism: Ultrathin Films, Multilayers and Nanostructures (eds Bland, J. A. C. & Mills, D. L.) 227-272 (Contemporary Concepts of Condensed Matter Science, eds Burstein, E., Cohen, M. L., Mills, D. L., Stiles, P. J., Elsevier, New York, 2006).
5. Hall, K. C. & Flatte, M. E. Performance of a spin-based insulated gate field effect transistor. Appl. Phys. Lett. 88, 162503 (2006).
6. Feher, G. & Gere, E. A. Electron spin resonance experiments on donors in silicon: II. Electron spin relaxation effects. Phys. Rev. 114, 1245-1256 (1959).
7. Tyryshkin, A. M., Lyon, S. A., Jantsch, W. & Schaffler, F. A. Spin manipulation of free two-dimensional electrons in Si/SiGe quantum wells. Phys. Rev. Lett. 94, 126802 (2005).
8. Zarifis, V. & Castner, T. G. ESR linewidth behavior for barely metallic n-type silicon. Phys. Rev. B 36, 6198-6201 (1987).
9. Sugahara, S. & Tanaka, M. A spin metd-oxide-semicanductor field effect transistor using half-metallic contacts for the source and drain. Appl. Phys. Lett. 84, 2307-2309 (2004).
10. Dennis, C. L., Tiusan, C. V., Gregg, J. F., Ensell, G. J. & Thompson, S. M. Silicon spin diffusion transistor: Materials, physics and device characteristics. IEE Proc. Circuits Dev. Syst. 152, 340-354 (2005).
11. Yablanovitch, E. et al. Quantum repeaters based on Si/SiGe heterostructures. Proc. IEEE 91, 761-780 (2003).
12. D'yakonov, M. I. & Perel', V. I. in Optical Orientation (eds Meier, F. & Zakharchenya, B. P.) Ch. 2, 11-71 (North-Holland, Amsterdam, 1984).
13. 3 tunnel barrier contacts for electrical spin injection into GaAs. Appl. Phys. Lett. 84, 4334-4336 (2004).
14. Rashba, E. I. Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem. Phys. Rev. B 62, R16267-16270 (2000).
15. Schmidt, G., Ferrand, D., Molenkamp, L. W., Filip, A. T. & van Wees, B. J. Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffuse semiconductor. Phys. Rev. B 62, R4790-R4793 (2000).
16. Hanbicki, A. T. et al. Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier. Appl. Phys. Lett. 82, 4092-4094 (2003).
17. Wagner, J. Photoluminescence excitation spectroscopy in heavily doped n- and p-type silicon. Phys. Rev. B 29, 2002-2009 (1984).
18. Adelmann, C., Lou, X., Strand, J., Palmstrom, C. J. & Crowell, P. A. Spin injection and relaxation in ferromagnet-semiconductor heterostructures. Phys. Rev. B 71, 121301(R) (2005).
19. Jiang, X. et al. Highly spin polarized room temperature tunnel injector for semiconductor spintronics using MgO(100). Phys. Rev. Lett. 94, 056601 (2005).
20. Motsnyi, V. F. et al. Electrical spin injection in a ferromagnet/tunnel barrier /semiconductor heterostructure. Appl. Phys. Lett. 81, 265-267 (2002).
21. Manago, T. & Akinaga, H. Spin-polarized light-emitting diode using metal/insulator /semiconductor structures. Appl. Phys. Lett. 81, 694-696 (2002).
22. Zhu, H. J. et al. Room-temperature spin injection from Fe into GaAs. Phys. Rev. Lett. 87, 016601 (2001).
23. Jonker, B. T. et al. Quantifying electrical spin injection: Component-resolved electroluminescence from spin-polarized light-emitting diodes. Appl Phys. Lett. 79, 3098-3100 (2001).
24. Lampel, G. Nuclear dynamic polarization by optical electronic saturation and optical pumping in semiconductors. Phys. Rev. Lett. 20, 491-493 (1968).
25. Thewalt, M. L. W. et al. Photoluminescence lifetime, absorption and exdtation spectroscopy measurements on isoelectronic bound excitons in beryllium-doped silicon. Solid State Commun. 44, 573-577 (1982).
26. Yu, P. & Cardona, M. Fundamentals of Semiconductors (Springer, Berlin, 1996).
27. Zutic, I., Fabian, J. & Erwin, S. C. Spin injection and detection in silicon. Phys. Rev. Lett. 97, 026602 (2006).
28. Costa, J. C. et al. Barrier height variation in Al/ GaAs Schottky diodes with a thin silicon interfacial layer. Appl. Phys. Lett. 58, 382-384 (1991).
29. Appelbaum, I., Huang, B. & Monsma, D. Electronic measurement and control of spin transport in silicon. Nature 447, 295-298 (2007).
30. x /Si multiple quantum well growth. Jpn. J. Appl. Phys. 33, 2317-2321 (1994).