Synthesis of new pure ferromagnetic semiconductors: MnGeP2 and MnGeAs2

Solid State Communications

Volumn 129, Issue 9, 2004, Pages 609-613

  Cho, Sunglae ^a   Choi, Sungyoul ^a   Cha, Gi Beom ^a   Hong, Soon Cheol ^a   Kim, Yunki ^b   Freeman, Arthur J ^b   Ketterson, John B ^b   Park, Yongsup ^c   Park, Hyun Min ^c  

^a University of Ulsan   (South Korea)

^b NORTHWESTERN UNIVERSITY   (United States)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

A. Semiconductor compounds; D. Spin polarized transport in semiconductors

Indexed keywords

CHARGE CARRIERS; CRYSTAL STRUCTURE; ELECTRIC RESISTANCE MEASUREMENT; ENERGY GAP; FERROMAGNETIC MATERIALS; HALL EFFECT; MAGNETIC MOMENTS; MAGNETIZATION; MAGNETORESISTANCE; MOLECULAR BEAM EPITAXY; PHASE TRANSITIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING MANGANESE COMPOUNDS; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

CHALCOPYRITE COMPOUNDS; FERROMAGNETIC SEMICONDUCTORS;

MAGNETIC SEMICONDUCTORS;

EID: 0346340804     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2003.11.040     Document Type: Article

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