Electron-carrier generation by edge dislocations in InN films: First-principles study

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2767-2771

  Takei, Y ^a   Nakayama, T ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

A1. Defects; B1. Nitrides; B2. Semiconducting indium compounds

Indexed keywords

A1. DEFECTS; B1. NITRIDES; B2. SEMICONDUCTING INDIUM COMPOUNDS; CARRIER GENERATION; DISLOCATION CORE; EDGE DISLOCATION; ELECTRON CARRIER; ENERGY POSITION; EXPERIMENTAL SUGGESTION; FERMI ENERGY; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; INN FILMS;

CONDUCTION BANDS; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; NITRIDES; SEMICONDUCTING INDIUM; SOLID STATE PHYSICS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 65749083519     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.019     Document Type: Article

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