Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior

Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

  Dmowski, L H ^a   Baj, M ^b   Suski, T ^a   Przybytek, J ^b   Czernecki, R ^a   Wang, X ^c   Yoshikawa, A ^d   Lu, H ^e   Schaff, W J ^f   Muto, D ^g   Nanishi, Y ^g  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

^c PEKING UNIVERSITY   (China)

^d CHIBA UNIVERSITY   (Japan)

^e NANJING UNIVERSITY   (China)

^f Cornell University   (United States)

^g RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AC MEASUREMENTS; FREE HOLES; FUNCTION OF FREQUENCY; MG CONTENT; MG-DOPED; OVERDOPING; P-TYPE; SURFACE LAYERS; THERMOPOWER; TYPE INVERSION;

ELECTRIC CONNECTORS; ELECTRIC CURRENTS; ELECTRIC SWITCHGEAR; GYRATORS; HALL MOBILITY; THERMOELECTRIC POWER; WINDOWS;

GALVANOMAGNETIC EFFECTS;

EID: 67650245456     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3153942     Document Type: Conference Paper

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