Dislocation-independent mobility in lattice-mismatched epitaxy: Application to GaN

Solid State Communications

Volumn 117, Issue 10, 2001, Pages 571-575

  Look, D C ^a   Stutz, C E ^b   Molnar, R J ^c   Saarinen, K ^d   Liliental Weber, Z ^e  

^a WRIGHT STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^d AALTO UNIVERSITY   (Finland)

^e LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INTERFACES (MATERIALS); LATTICE CONSTANTS;

DISLOCATION-INDEPENDENT MOBILITY; LATTICE-MISMATCHED EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035251924     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(01)00010-2     Document Type: Article

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