Improvement on epitaxial grown of InN by migration enhanced epitaxy

Applied Physics Letters

Volumn 77, Issue 16, 2000, Pages 2548-2550

  Lu, Hai ^a   Schaff, William J ^a   Hwang, Jeonghyun ^a   Wu, Hong ^a   Yeo, Wesley ^a   Pharkya, Amit ^a   Eastman, Lester F ^a  

^a School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000149005     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1318235     Document Type: Article

References (7)

1. S. Strite and H. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992).
2. S. K. O'Leary, B. E. Foutz, M. S. Shur, and L. F. Eastman, J. Appl. Phys. 83, 826 (1998).
3. B. E. Foutz, S. K. O'Leary, M. S. Shur, and L. F. Eastman, J. Appl. Phys. 85, 7727 (1999).
4. J. W. Trainer and K. Rose, J. Electron. Mater. 3, 821 (1974).
5. Y. Horikoshi, J. Cryst. Growth 201, 150 (1998).
6. Q. X. Guo, T. Yamamura, A. Yoshida, and N. Itoh, J. Appl. Phys. 75, 4927 (1994).
7. V. W. L. Chin, T. L. Transley, and T. Osotchan, J. Appl. Phys. 75, 7365 (1994).