High-quality InN grown on KOH wet etched N-polar InN template by RF-MBE

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 7, 2006, Pages 1691-1695

  Muto, D ^a   Naoi, H ^a   Araki, T ^a   Kitagawa, S ^a   Kurouchi, M ^a   Na, H ^a   Nanishi, Y ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; TEMPLATES;

ETCHING; MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

FILM GROWTH;

EID: 33745043541     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565321     Document Type: Article

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