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Applied Physics Letters

Volumn 94, Issue 6, 2009, Pages

Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy

(6) Ebert, Ph a Ivanova, L b Borisova, S a Eisele, H b Laubsch, A c Dahne M b

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b TECHNISCHE UNIVERSITÄT BERLIN (Germany)

c OSRAM OPTO SEMICONDUCTORS GMBH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; GALLIUM ALLOYS; GALLIUM NITRIDE; ION EXCHANGE; SCANNING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM;

CORE STRUCTURES; SHOCKLEY PARTIAL DISLOCATIONS; SPATIAL DISTRIBUTIONS;

ELECTRONIC PROPERTIES;

EID: 60349107574 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3073741 Document Type: Article

Times cited : (30)

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