Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy

Applied Physics Letters

Volumn 89, Issue 16, 2006, Pages

  Wang, Kejia ^a   Cao, Yu ^a   Simon, John ^a   Zhang, Jing ^a   Mintairov, Alexander ^a   Merz, James ^a   Hall, Douglas ^a   Kosel, Thomas ^a   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; TRANSPORT PROPERTIES;

DISLOCATION DENSITIES; DISLOCATION SCATTERING; STRUCTURAL QUALITY;

ELECTRON SCATTERING;

EID: 33750172792     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2364456     Document Type: Article

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