Investigation on the structural origin of n-type conductivity in InN films

Journal of Physics D: Applied Physics

Volumn 41, Issue 13, 2008, Pages

  Wang, H ^a   Jiang, D S ^a   Wang, L L ^a   Sun, X ^a   Liu, W B ^a   Zhao, D G ^a   Zhu, J J ^a   Liu, Z S ^a   Wang, Y T ^a   Zhang, S M ^a   Yang, H ^a,b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CONCENTRATION (PROCESS); ELECTRIC PROPERTIES; GALVANOMAGNETIC EFFECTS; HALL EFFECT; HALL MOBILITY; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; POINT DEFECTS; POSITRONS; SECONDARY ION MASS SPECTROMETRY; SINGLE CRYSTALS;

CARRIER (CO); ELECTRICAL (ELECTRONIC) PROPERTIES; ELECTRON CONCENTRATIONS; INN FILMS; N TYPE CONDUCTIVITIES; SECONDARY IONS; STRUCTURAL DEFECTS; STRUCTURAL ORIGIN; THREADING DISLOCATIONS (TD);

MAGNETIC FIELD EFFECTS;

EID: 48249116766     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/13/135403     Document Type: Article

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