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Physica Status Solidi (A) Applied Research

Volumn 192, Issue 2, 2002, Pages 407-411

Determination by electron holography of the electronic charge distribution at threading dislocations in epitaxial GaN

(2) Cai, J a Ponce, F A a

a ARIZONA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DISLOCATIONS (CRYSTALS); ELECTRON HOLOGRAPHY; ELECTRONIC PROPERTIES; ELECTROSTATICS; MOLECULAR BEAM EPITAXY;

THREADING DISLOCATIONS;

GALLIUM NITRIDE;

EID: 0036670894 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200208)192:2<407::AID-PSSA407>3.0.CO;2-M Document Type: Conference Paper

Times cited : (47)

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