Electrical characteristics of Mo/4H-SiC Schottky diodes having ion-implanted guard rings: Temperature and implant-dose dependence

Semiconductor Science and Technology

Volumn 26, Issue 8, 2011, Pages

  Latreche, A ^a   Ouennoughi, Z ^a   Sellai, A ^b   Weiss, R ^c   Ryssel, H ^c  

^a FERHAT ABBAS UNIVERSITY   (Algeria)

^b SULTAN QABOOS UNIVERSITY   (Oman)

^c FIIS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CAPACITANCE; DIODES; DISTRIBUTION FUNCTIONS; GAUSSIAN DISTRIBUTION; ION IMPLANTATION; IONS; MOLYBDENUM COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SILICON CARBIDE; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION;

CAPACITANCE VOLTAGE MEASUREMENTS; CONDUCTION MECHANISM; ELECTRICAL CHARACTERISTIC; GAUSSIAN DISTRIBUTION MODEL; GAUSSIAN DISTRIBUTION OF THE BARRIER HEIGHT; RICHARDSON CONSTANT; SCHOTTKY BARRIER HEIGHTS; TEMPERATURE DEPENDENCE;

SCHOTTKY BARRIER DIODES;

EID: 80051986583     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/8/085003     Document Type: Article

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