High voltage silicon carbide schottky diodes with single zone junction termination extension

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 873-876

  Vassilevski, K ^a   Nikitina, I ^a   Horsfall, A ^a   Wright, N G ^a   O'Neill A G ^a   Hilton, K P ^b   Munday, A G ^b   Hydes, A J ^b   Uren, M J ^b   Johnson, C M ^c  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b QINETIQ   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Ion implantation; Junction termination; Molybdenum; Schottky diode

Indexed keywords

AVALANCHE DIODES; DIODES; ELECTRIC FIELDS; ION IMPLANTATION; MOLYBDENUM; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SILICON WAFERS;

4H-SIC SCHOTTKY DIODES; AVALANCHE BREAKDOWN; DEVICE PROCESSING; DONOR CONCENTRATIONS; JUNCTION TERMINATION; JUNCTION TERMINATION EXTENSIONS; SCHOTTKY DIODES; SILICON CARBIDE SCHOTTKY DIODES;

POWER SEMICONDUCTOR DIODES;

EID: 37249029925     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.873     Document Type: Conference Paper

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