Pulsed breakdown of 4H-SiC Schottky diodes terminated with a boron-implanted p-n junction

Semiconductors

Volumn 42, Issue 7, 2008, Pages 858-861

  Ivanov, P A ^a   Grekhov, I V ^a   Potapov, A S ^a   Samsonova, T P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

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Indexed keywords

EID: 47249106027     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782608070178     Document Type: Article

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