High temperature operation of silicon carbide Schottky diodes with recoverable avalanche breakdown

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 931-934

  Vassilevski, K ^a   Nikitina, I ^a   Bhatnagar, P ^a   Horsfall, A ^a   Wright, N ^a   O'Neill, A G ^a   Uren, M ^b   Hilton, K ^b   Munday, A ^b   Hydes, A ^b   Johnson, C M ^c  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b QINETIQ   (United Kingdom)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

4H SiC; Molybdenum; Nickel; Nickel suicide; Schottky diode

Indexed keywords

AVALANCHE DIODES; ELECTRIC BREAKDOWN; HIGH TEMPERATURE OPERATIONS; NICKEL COMPOUNDS; SILICON CARBIDE; THERMAL EFFECTS;

NICKEL SUICIDE; RECOVERABLE AVALANCHE BREAKDOWNS; ROOM TEMPERATURE; SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 34347354106     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.931     Document Type: Conference Paper

References (15)

1. Cree, Inc.: Zero recovery rectifiers (http://www.cree.com/ftp/pub/ CSDALL.pdf)
2. Infineon Technologies AG: Silicon Carbide Ultrafast Schottky Diode Chips (http://www.infineon.com)
3. R. Singh, J. Cooper, M. Melloch, T. Chow and J. Palmour: IEEE Trans. ED Vol. 49 (2002), p. 665
4. T. Nakamura, T. Miyanagi, I. Kamata, T. Jikimoto and H. Tsuchida: IEEE EDL Vol. 26 (2005). p. 99
5. R. Weiss, L. Frey and H. Ryssel: Applied Surface Science Vol. 184 (2001), p. 413
6. I. Shalish and Y. Shapira: IEEE EDL Vol. 21 (2000), p. 581
7. 1. Shalish. C. de Oliveira, Y. Shapira, L. Burstein and M. Eizenberg: J. Appl. Phys. Vol. 88 (2000), p. 5724
8. M. Sochacki, A. Kolendo, J. Szmidt and A. Werbowy: Solid-State Electr. Vol. 49 (2005) p. 585
9. F. Roccaforte, F. La Via, A. Baeri, V. Raineri, L. Calcagno and F. Mangano: J. Appl. Phys. Vol. 96 (2004), p. 4313
10. A. Konstantinov, Q. Wahab, N. Nordell and U. Lindefeit: Mater. Sci. Forum Vols. 264-268 (1998), p. 513
11. K. Vassilevski, A. Horsfall, C.M. Johnson, N. Wright: Mater. Sci. Forum Vols. 457-460 (2004), p. 989
12. A.S. Kyuregyan: Semiconductors Vol. 34 (2000), p. 835
13. I. Nikitina, K. Vassilevski, N. Wright, A. Horsfall, A. O'Neill and C. M. Johnson: J. Appl. Phys. Vol. 97 (2005), p. 083709
14. E.H. Rhoderick and R.H. Williams: Metal-Semiconductor Contacts (Oxford Science Publications, 1988), p. 124
15. J.A. Cooper and A. Agarwal: Proc. IEEE Vol. 90 (2002), p. 956