A new method of diode ideality factor extraction from dark I-V curve

Current Applied Physics

Volumn 9, Issue 4, 2009, Pages 833-838

  Kavasoglu, Nese ^a   Kavasoglu, A Sertap ^a   Oktik, Sener ^a  

^a MUGLA SITKI KOCMAN UNIVERSITY   (Turkey)

Author keywords

Anomalous current voltage characterization; BPW34; Curvature function; Diode ideality factor; p i n device

Indexed keywords

ANOMALOUS CURRENT-VOLTAGE CHARACTERIZATION; BPW34; CURRENT VOLTAGES; CURVATURE FUNCTION; DARK CURRENT VOLTAGES; DARK I-V CURVES; EXPERIMENTAL DATUM; LINEAR REGIONS; NEW MODELS; P-I-N DEVICE; UNIPOLAR DEVICES;

DIODES;

EID: 61849124648     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2008.08.002     Document Type: Article

References (23)

1. Chan D.S.H., and Phang J.C.H. IEEE Trans. Electron Dev. Ed-34 (1987) 286
2. Jain A., and Kapoor A. Sol. Energy Mater. Sol. Cells 85 (2005) 391
3. Jain A., Sharma S., and Kapoor A. Sol. Energy Mater. Sol. Cells 90 (2006) 25
4. Bashahu M., and Nkundabakura P. Sol. Energy 81 (2007) 856
5. Arcipiani B. Rev. Phys. Appl. 20 (1985) 269
6. Maa Y.J., and Abdel-Motaleb I.M. Solid-State Electron. 46 (2002) 735
7. Norde H. J. Appl. Phys. 5 (1979) 5052
8. Popescu C., Manifacier J.C., and Ardebili R. Phys. Status Solidi (A) 158 (1996) 611
9. Thompson M.J., Johnson N.H., Nemerich R.J., and Tsai C.C. Appl. Phys. Lett. 39 (1981) 274
10. Werner J.H. Appl. Phys. A (Mater. Sci. and Process.) 47 (1988) 291
11. Wolf M., and Rauschenbach H. Adv. Energy Conversion 3 (1963) 455
12. Kumar S., Katharria Y.S., Baranwal V., Batra Y., and Kanjilal D. Appl. Surf. Sci. 254 (2008) 3277
13. Zhu S., Van Meirhaeghe R.L., Forment S., Ru G., and Li B. Solid-State Electron. 48 (2004) 1205
14. Pattabi M., Krishnan S., and Sanjeev G. Sol. Energy Mater. Sol. Cells 91 (2007) 1521
15. Shah J.M., Li Y.-L., Gessmann Th., and Schubert E.F. J. Appl. Phys. 94 (2003) 2627
16. Sharma A.T., Shahnawaz, Kumar S., Katharria Y.S., and Kanjilal D. Appl. Surf. Sci. 254 (2007) 459
17. Ru G.-P., Van Meirhaeghe R.L., Forment S., Jiang Y.-L., Qu X.-P., Zhu S., and Li B.-Z. Solid-State Electron. 49 (2005) 606
18. S. Krishnan, Ganesh Sanjeev, M. Pattabi, X. Mathew, Sol. Energ. Mat. Sol. C. (2008), doi:10.1016/j.solmat.2007.12.002.
19. D.K. Schroder, Semiconductor material and device characterization, John Wiley&Sons, Inc. Copyright, 1990.
20. Torrey H.C., and Whitmer C.A. Crystal Rectifiers (1948), McGraw-Hill, New York Ch. 8
21. Hwang J.D., Fang Y.K., Chen K.H., and Yaung D.N. IEEE Electron. Dev. L. 16 (1995) 193
22. Escher J.S., Berg H.M., Lewis G.L., Moyer C.D., Robertson T.U., and Wey H.A. IEEE Trans. Electron. Dev. Ed-29 (1982) 1463
23. Kang Y., Xu Y., Zhao D., and Fang J. Solid-State Electron. 49 (2005) 1135