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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 4, 2011, Pages

Charge trapping defects in Si/SiO2 / Hf (1-x) Six O2 film stacks characterized by spectroscopic second-harmonic generation

(5) Price, J a,b Lei, Ming a Lysaght, P S b Bersuker, G a Downer, M C a

a UNIVERSITY OF TEXAS AT AUSTIN (United States)

b SEMATECH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; DIELECTRIC FILMS; EMISSION SPECTROSCOPY; HAFNIUM OXIDES; OXYGEN VACANCIES; PHOTOIONIZATION; PHOTONS; POINT DEFECTS; SILICATES; SILICON;

ALLOY COMPOSITIONS; DEFECT SPECTRA; EXCITATION WAVELENGTH; HF SILICATE; HIGH-K DIELECTRIC; MULTI-PHOTON PHOTOEMISSION; OPTICAL CHARACTERIZATION; ORDERS OF MAGNITUDE; OXIDE SURFACE; OXYGEN VACANCY DEFECTS; SECOND-HARMONIC; SI SUBSTRATES; TIME-DEPENDENT; TRAPPING DEFECTS; TRAPPING RATE; TWO PHOTON IONIZATION;

HAFNIUM;

EID: 80051866546 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3591433 Document Type: Article

Times cited : (4)

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