Atomic layer deposited HfO2 and HfSiO to enable CMOS gate dielectric scaling, mobility, and VTH stability

ECS Transactions

Volumn 1, Issue 10, 2006, Pages 15-28

  Kirsch, Paul D ^a,b   Quevedo Lopez, Manuel ^a,c   Krishnan, Siddarth A ^a   Song, S C ^a   Choi, Rino ^a   Majhi, Prashant ^a,d   Senzaki, Yoshi ^a   Bersuker, Gennadi ^a   Lee, Byoung Hun ^a,d  

^a SEMATECH   (United States)

^b IBM   (United States)

^c TI

^d INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON MOBILITY; REDUCTION; SILICON COMPOUNDS; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

ATOMIC LAYER DEPOSITION (ALD); HIGH FIELD MOBILITY; TRANSIENT CHARGING;

HAFNIUM COMPOUNDS;

EID: 33846849611     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2209326     Document Type: Conference Paper

References (33)

1. M. Khare, et al., IEDM Tech. Dig., 407 (2002).
2. S. Thompson, et al., IEDM Tech. Dig., 61 (2002).
3. P. Bai, et al., IEDM Tech. Dig., 657 (2004).
4. J. Roberson, J. Vac. Sci. Technol. B. 18, 1785 (2000).
5. Y. Senzaki, S. Park, H. Chatham, L. Bartholomew, and W. Nieveen, J. Vac. Sci. Technol. A. 22, 1175 (2004).
6. A. Callegari et al., W/HfO2 gate stacks with Tinv=12A. in Solid State Device and Materials. 2003. Tokyo.
7. B.H. Lee, IEDM Tech. Dig., 859 (2004).
8. P.D. Kirsch, submitted to J. Appl. Phys., (2005).
9. P.D. Kirsch, J.H.Sim, S.C.Song, S. Krishnan, J. Peterson, H.-J. Li, M. Quevedo-Lopez, C.D. Young, R.Choi, N.Moumen, P.Majhi, Q. Wang, J.G. Ekerdt, G.Bersuker, and B.H.Lee. Mobility Enhancement of High-k Gate Stacks Through Reduced Transient Charging, in EESDERC. 2005. Grenoble: IEEE.
10. M.A. Quevedo-Lopez, S.A. Krishnan, P.D. Kirsch, H.J. Li, J.H. Sim, C. Huffman, J.J. Peterson, B.H. Lee, G. Pant, B.E. Gnade, M. J., Kim, R.M. Wallace, D. Guo, H. Bu, and T.P. Ma, accepted IEDM Tech. Dig., (2005).
11. G. Baccarani, M.R. Wordeman, and R.H. Dennard, IEEE Trans. Elec. Dev. 31, 452 (1984).
12. G. Timp, IEDM Tech. Dig., 615 (1998).
13. G. Pant, M. Quevedo-Lopez, P.D. Kirsch, M. Kim, B.E. Gnade, and R.M. Wallace, submitted to Appl. Phys. Lett., (2005).
14. M.L. Green, M.-Y. Ho, B. Busch, G.D. Wilk, T. Sorsch, T. Conard, B. Brijs, W. Vandervorst, P.I. Raisanen, D. Muller, M. Bude, and J. Grazul, J. Appl. Phys. 92, 7168 (2002).
15. F. DeSmedt, C. Vinckier, I. Cornelissen, S.D. Gendt, and M. Heyns, J. Electrochemical Soc. 147, 1124 (2000).
16. M. Hiratani, S. Saito, Y. Shimamoto, and K. Torii, Jpn. J. Appl. Phys. 41, 4521 (2002).
17. T. Yamaguchi, R. Iijima, T. Ino, A. Nishiyama, H. Satake, and N. Fukushima, IEDM Tech. Dig. , 621 (2002).
18. M. Fischetti, D. Neumayer, and E. Cartier, J. Appl. Phys. 90, 4587 (2001).
19. S.C. Song, Z. Zhang, C. Huffman, J.H. Sim, S.H. Bae, P. Kirsch, P. Majhi, N. Moumen, and B.H. Lee, submitted IEEE Trans. Electron Dev., (2005).
20. M.A. Quevedo-Lopez, P.D. Kirsch, and M.J. Kim, Submitted Appl. Phys. Lett., (2005).
21. Z. Zhang, submitted to Electron Device Letters., (2005).
22. C.D. Young, P. Zeitzoff, G.A. Brown, B.H. Lee, and J.R. Hauser, Electron Dev. Lett. 26, 586 (2005).
23. J.H. Sim, S.C. Song, P.D. Kirsch, C.D. Young, R. Choi, D.L. Kwong, B.H. Lee, and G. Bersuker. Effects of ALD HfO2 Thickness on Charge Trapping and Mobility, in INFOS. 2005.
24. S. Takagi, A. Toriuni, M. Iwase, and H. Tango, IEEE Trans. Electron Dev. 41, 2357 (1994).
25. W.J. Zhu and T.P. Ma, Electron Dev. Lett. 25, 89 (2004).
26. G. Bersuker, C.S. Park, J. Barnett, P. Lysaght, P.D. Kirsch, B.H. Lee, B. Foran, J. Watling, A. Asenov, K.van Benthem, S. Pennycook, J. Greer, and A. Korkin, accepted SISC., (2005).
27. R. Chau, S. Datta, M. Doczy, B. Doyle, J. Kavalieros, and M. Metz, Electron Device Letters. 25, 408 (2004).
28. O. Weber, IEDM Tech. Dig., (2004).
29. D. Ishikawa, IEDM Tech. Dig., 869 (2002).
30. P.A. Kraus, Semi. Fabtech. 23, 73 (2004).
31. S. Datta, G. Dewey, M. Doczy, B.S. Doyle, B. Jin, J. Kavalieros, R. Kotlyar, M. Metz, and N. Zelick, IEDM Tech. Dig., 653 (2003).
32. S. Zafar, J. Appl. Phys. 93, 9298 (2003).
33. B.H. Lee, C.D. Young, R. Choi, J.H. Sim, G. Brown, and G. Bersuker, Ext. Abs. of SSDM. , 518 (2004).