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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 310-312

Identification of interfacial defects in high-k gate stack films by spectroscopic ellipsometry

(3) Price, J a Bersuker, G a Lysaght, P S a

a SEMATECH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC CALCULATIONS; BAND GAPS; CHARACTERIZATION METHODS; COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR DEVICES; DIELECTRIC GATES; ELECTRON SPIN RESONANCES; HIGH-K GATE STACKS; IN LINES; INDUCED DEFECTS; INTERFACIAL DEFECTS; POST-DEPOSITION ANNEAL; SPECTROSCOPIC STUDIES; THEORETICAL CALCULATIONS;

CHARGE COUPLED DEVICES; DEFECTS; DIELECTRIC FILMS; DIELECTRIC MATERIALS; ELLIPSOMETRY; EPITAXIAL GROWTH; HAFNIUM; HAFNIUM COMPOUNDS; LOGIC GATES; METALLIC COMPOUNDS; MOS DEVICES; OZONE WATER TREATMENT; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICON; SPECTROSCOPIC ANALYSIS; SPECTROSCOPIC ELLIPSOMETRY; SPIN DYNAMICS;

ELECTRON SPIN RESONANCE SPECTROSCOPY;

EID: 59949087152 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3021045 Document Type: Article

Times cited : (30)

References (8)

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