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Volumn 85, Issue 20, 2004, Pages 4699-4701

Film and interface layer properties of ultraviolet-ozone oxidized hafnia and zirconia gate dielectrics on silicon substrates

(2) Chi, David a McIntyre, Paul C a

a Stanford University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); OXIDE PEAK INTENSITIES; OZONE EXPOSURE; ULTRAVIOLET-OZONE;

DIELECTRIC MATERIALS; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; MERCURY VAPOR LAMPS; OXIDATION; OZONE; PERMITTIVITY; REDUCTION; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA;

SILICON;

EID: 10944254800 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1814799 Document Type: Article

Times cited : (28)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.