Determination of the laterally homogeneous barrier height of thermally annealed and unannealed Au/p-InP/Zn-Au Schottky barrier diodes

Applied Surface Science

Volumn 254, Issue 11, 2008, Pages 3558-3561

  Asubay, S ^a   Güllü, Ö ^b   Turut A ^b  

^a DICLE UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Barrier inhomogeneity; InP semiconductor; Metal semiconductor metalcontacts; Schottky barrier height

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; INDIUM PHOSPHIDE; RAPID THERMAL ANNEALING; SURFACE PROPERTIES;

BARRIER INHOMOGENEITY; SCHOTTKY BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 39749175700     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.11.050     Document Type: Article

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