Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse

Physica B: Condensed Matter

Volumn 405, Issue 9, 2010, Pages 2337-2339

  Gassoumi, M ^a   Fathallah, O ^a   Gaquiere, C ^b   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

AlGaN GaN; CDLTS; Deep level; HEMT; Trap

Indexed keywords

ALGAN/GAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DEEP LEVEL; DEEP TRAPS; GATE PULSE; HETEROSTRUCTURES;

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON MOBILITY; GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77950061501     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2010.02.042     Document Type: Article

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