Electron transport measurements of Schottky barrier inhomogeneities

Applied Physics Letters

Volumn 80, Issue 10, 2002, Pages 1761-1763

  Calvet, L E ^a   Wheeler, R G ^a   Reed, M A ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CONTACT AREAS; DIRECT TUNNELING; ELECTRON TRANSPORT; ELECTRON TRANSPORT MEASUREMENTS; GATE VOLTAGES; HEIGHT VARIATION; INHOMOGENEITIES; LOW TEMPERATURES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; METAL/SEMICONDUCTOR INTERFACE; NON-UNIFORMITIES; NONMONOTONICITIES; RESONANT PEAKS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS;

CARRIER CONCENTRATION; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; MOSFET DEVICES; SCHOTTKY BARRIER DIODES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79956028390     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1456257     Document Type: Article

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