Study of the leakage current mechanism in Schottky contacts to Al 0.25Ga0.75N/GaN heterostructures with AlN interlayers

Semiconductor Science and Technology

Volumn 24, Issue 5, 2009, Pages

  Huang, Sen ^a   Shen, Bo ^a   Xu, Fu Jun ^a   Lin, Fang ^a   Miao, Zhen Lin ^a   Song, Jie ^a   Lu, Lin ^a   Cen, Long Bin ^a   Sang, Li Wen ^a   Qin, Zhi Xin ^a   Yang, Zhi Jian ^a   Zhang, Guo Yi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; CURRENT-VOLTAGE MEASUREMENTS; DEFECT STATE; DEFECT STATE DENSITY; DENSITY OF ELECTRONS; GROWTH TIME; HETEROSTRUCTURES; HIGH TEMPERATURE; INTERLAYER THICKNESS; SCHOTTKY CONTACTS;

ACTIVATION ENERGY; ALUMINUM; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CRYSTALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECT DENSITY; ELECTRIC POTENTIAL; GALLIUM; HETEROJUNCTIONS; LEAKAGE CURRENTS;

COMPOSITE FILMS;

EID: 68849119728     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/5/055005     Document Type: Article

References (19)

1. Mishra U K, Parikh P P and Wu Y F 2002 Proc. IEEE 90 1022
2. Karmalkar S, Sathaiya D M and Shur M S 2003 Appl. Phys. Lett. 82 3976
3. Levinshtein M E, Rumyantsev S L, Gaska R, Wang J W and Shur M S 1998 Appl. Phys. Lett. 73 1089
4. Hsu L and Walukiewicz W 2001 J. Appl. Phys. 89 1783
5. örekçi S, ztürk M K, Akaoglu B, akmak M and zcelik S 2007 J. Appl. Phys. 101 123502
6. Zhang H, Miller E T and Yu E T 2006 J. Appl. Phys. 99 023703
7. Hasegawa H and Oyama S 2002 J. Vac. Sci. Technol. B 20 1467
8. Chen C H, Baier S M, Arch D K and Shur M S 1988 IEEE Trans. Electron Device 35 570
9. Geng L, Ponce F A, Tanaka S, Omiya H and Nakagawa Y 2001 Phys. Status Solidi A 188 803
10. Lee I H, Kim T G and Park Y 2002 J. Cryst. Growth 234 305
11. Smorchkova I P, Chen L, Mates T, Shen L, Heikman S, Moran B, Denbaars S P, Speck J S and Mishra U K 2001 J. Appl. Phys. 90 5196
12. Hsu J W P, Manfra M J, Molnar R J, Heying B and Speck J S 2002 Appl. Phys. Lett. 81 79
13. Wang M J, Shen B, Xu F J, Wang Y and Xu J 2007 Appl. Phys. A 88 715
14. Zhang A P, Rowland L B, Kaminsky E B, Tilak V, Grande J C, Teetsov J, Vertiatchikh A and Eastman L F 2003 J. Electron. Mater. 32 388
15. Götz W, Johnson N M, Amano H and Akasaki I 1994 Appl. Phys. Lett. 65 463
16. Fang Z Q, Look D C and Polenta L 2002 J. Phys.: Condens. Matter. 14 13061
17. Lefevre H and Schulz M 1977 Appl. Phys. 12 45
18. Osvald J 2007 Appl. Phys. A 87 679
19. Langer J M and Heinrich H 1985 Phys. Rev. Lett. 55 1414