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Volumn 108, Issue 6, 2010, Pages

Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers

(5) Fang, Z Q a,b Claflin, B a,b Look, D C a,b Green, D S c Vetury, R c

a WRIGHT STATE UNIVERSITY (United States)

b AIR FORCE RESEARCH LABORATORY (United States)

c RF MICRO DEVICES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; CAPACITANCE VOLTAGE MEASUREMENTS; CARBON CONCENTRATIONS; CURRENT VOLTAGE; DEEP TRAPS; DENSITY OF ELECTRONS; DLTS; ELECTRICAL PROPERTY; EXTENDED DEFECT; GAN BUFFER LAYERS; GRAIN SIZE; HIGH CONCENTRATION; INTERFACE REGIONS; LOW CONCENTRATIONS; LOW-LEAKAGE CURRENT; PULSE WIDTH; TEMPERATURE DEPENDENT; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES;

BUFFER LAYERS; CONCENTRATION (PROCESS); ELECTRIC PROPERTIES; ELECTRON TRAPS; ELECTRONS; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; LEAKAGE CURRENTS; OPTICAL WAVEGUIDES; SCHOTTKY BARRIER DIODES; THRESHOLD VOLTAGE;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 77957743064 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3488610 Document Type: Article

Times cited : (104)

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