Study of GaN MOS-HEMT using ultrathin Al2O3 dielectric grown by atomic layer deposition

Science in China, Series E: Technological Sciences

Volumn 52, Issue 9, 2009, Pages 2762-2766

  Yue, Yuanzheng ^a   Hao, Yue ^a   Feng, Qian ^a   Zhang, Jincheng ^a   Ma, Xiaohua ^a   Ni, Jinyu ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

ALD; AlGaN GaN MOS HEMT; Ultrathin Al2O3

Indexed keywords

ALD; ALGAN/GAN HEMTS; ALGAN/GAN MOS-HEMT; CAPACITANCE VOLTAGE; DEVICE FABRICATIONS; DEVICE STRUCTURES; GATE BIAS; GATE OXIDE; GATE-LENGTH; INTERFACE PROPERTY; MAXIMUM TRANSCONDUCTANCE; METAL-OXIDE-SEMICONDUCTOR HIGH ELECTRON MOBILITY TRANSISTOR; SIMILAR DESIGN; ULTRA-THIN; ULTRATHIN AL2O3;

ALUMINUM; ATOMS; DRAIN CURRENT; ELECTRIC POTENTIAL; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); MOS DEVICES; SEMICONDUCTING GALLIUM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 68749114172     PISSN: 10069321     EISSN: 1862281X     Source Type: Journal    
DOI: 10.1007/s11431-008-0231-5     Document Type: Article

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