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EPJ Applied Physics

Volumn 51, Issue , 2010, Pages 10304-p1-10304-p5

Parasitic effects and traps in AlGaN/GaN HEMT on sapphire substrate

(5) Fathallah, O a Gassoumi, M a Grimbert, B b Gaquiere C b Maaref, H a

a FACULTÉ DES SCIENCES DE MONASTIR (Tunisia)

b INSTITUT D ELECTRONIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84996135768 PISSN: 12860042 EISSN: 12860050 Source Type: Journal
DOI: 10.1051/epjap/2010085 Document Type: Article

Times cited : (8)

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