Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN/GaN heterostructures using capacitance deep level optical spectroscopy

Applied Physics Letters

Volumn 89, Issue 26, 2006, Pages

  Armstrong, A ^a   Chakraborty, A ^b   Speck, J S ^b   DenBaars, S P ^b   Mishra, U K ^b   Ringel, S A ^a  

^a The Ohio State University   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CAPACITANCE; CRYSTAL DEFECTS; GALLIUM NITRIDE; OPTICAL PROPERTIES; RELAXATION PROCESSES;

DEEP LEVEL OPTICAL SPECTROSCOPY (DLOS); GAS SHEET CHARGE; PINCH-OFF MODES;

HETEROJUNCTIONS;

EID: 33846063341     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2424670     Document Type: Article

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