Correlation between barrier heights and ideality factors of H-terminated Sn/p-Si(1 0 0) Schottky barrier diodes

Microelectronic Engineering

Volumn 85, Issue 4, 2008, Pages 721-726

  Boyarbay, B ^a   Cetin H ^b   Kaya, M ^a   Ayyildiz, E ^a  

^a ERCIYES UNIVERSITY   (Turkey)

^b BOZOK UNIVERSITY   (Turkey)

Author keywords

Barrier inhomogeneities; Metal semiconductor interfaces; Schottky barriers; Silicon; Thermionic emission

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; EVAPORATION; HYDROFLUORIC ACID; SEMICONDUCTING SILICON; THERMIONIC EMISSION; WET ETCHING;

BARRIER INHOMOGENEITIES; FITTING PARAMETERS; METAL SEMICONDUCTOR INTERFACES;

SCHOTTKY BARRIER DIODES;

EID: 40249111493     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.01.005     Document Type: Article

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