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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 1, 2010, Pages 92-95

Deep traps analysis in AlGaN/GaN heterostructure transistors

(5) Chikhaoui, W a Bluet, J M a Bru Chevallier, C a Dua, C b Aubry, R b

a UNIVERSITÉ DE LYON (France)

b NOKIA RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITRIDES; TRANSISTORS; WIDE BAND GAP SEMICONDUCTORS;

ALGAN/GAN HETEROSTRUCTURES; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DEEP TRAPS; DLTS MEASUREMENTS; EXTENDED DEFECT; LOCALISATION; PULSE DURATIONS; REVERSE BIAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77949689186 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200982634 Document Type: Conference Paper

Times cited : (25)

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