A critical re-evaluation of the usefulness of R-D framework in predicting NBTI stress and recovery

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Mahapatra, S ^a   Islam, A E ^b,c   Deora, S ^a   Maheta, V D ^a   Joshi, K ^a   Jain, A ^b   Alam, M A ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b PURDUE UNIVERSITY   (United States)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

bulk traps; hole trapping; interface traps; NBTI; R D model; SiON p MOSFETs

Indexed keywords

BULK TRAPS; HOLE TRAPPING; INTERFACE TRAPS; NBTI; P-MOSFETS; R-D MODEL;

DC POWER TRANSMISSION; DEGRADATION; HOLE TRAPS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; THERMODYNAMIC STABILITY;

INTEGRATED CIRCUITS;

EID: 79959298411     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784544     Document Type: Conference Paper

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