SCOPUS 정보 검색 플랫폼

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

Hysteretic drain-current behavior due to random telegraph noise in scaled-down FETs with high-κ/metal-gate stacks

(10) Miki, Hiroshi a Tega, Naoki a Ren, Zhibin b D'Emic, Christopher P b Zhu, Yu b Frank, David J b Guillorn, Michael A b Park, Dae Gyu b Haensch, Wilfried b Torii, Kazuyoshi c

a HITACHI AMERICA LTD (United States)

b IBM T J WATSON RESEARCH CENTER (United States)

c HITACHI LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT BEHAVIORS; EMISSION RATES; HYSTERETIC BEHAVIOR; HYSTERETIC EFFECTS; METAL-GATE; RANDOM TELEGRAPH NOISE; SUBTHRESHOLD; TEMPORAL BEHAVIOR; TRAP PARAMETERS; TURN-ON TRANSIENTS;

DRAIN CURRENT; ELECTRON DEVICES; HYSTERESIS; MESFET DEVICES; POWER QUALITY; TELEGRAPH;

TIME DOMAIN ANALYSIS;

EID: 79951843774 PISSN: 01631918 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2010.5703435 Document Type: Conference Paper

Times cited : (9)

References (6)

1
- 77952332560
- Reduction of random telegraph noise in high-κ/ metal-gate stacks for 22 nm generation FETs
- N. Tega, H. Miki, Z. Ren, C. P. D'Emic, Y. Zhu, D. J. Frank, J. Cai, M. A. Guillorn, D.-G. Park, W. Haensch, and K. Torii, "Reduction of random telegraph noise in high-κ/ metal-gate stacks for 22 nm generation FETs," in 2009 IEDM Tech. Dig., December 2009, p. 771.
- 2009 IEDM Tech. Dig., December 2009 , pp. 771
- Tega, N.¹ Miki, H.² Ren, Z.³ D'Emic, C.P.⁴ Zhu, Y.⁵ Frank, D.J.⁶ Cai, J.⁷ Guillorn, M.A.⁸ Park, D.-G.⁹ Haensch, W.¹⁰ Torii, K.¹¹

2
- 77957880623
- min analysis
- min analysis," in 2010 Symp. VLSI Tech., 2010, p. 95.
- 2010 Symp. VLSI Tech., 2010 , pp. 95
- Tanizawa, M.¹ Ohbayashi, S.² Okagaki, T.³ Sonoda, K.⁴ Eikyu, E.⁵ Hirano, Y.⁶ Ishikawa, K.⁷ Tsuchiya, O.⁸ Inoue, Y.⁹

3
- 77957872830
- Direct observation of RTN-induced SRAM failure by accelerated testing and its application to product reliability assesment
- K. Takeuchi, T. Nagumo, K. Takeda, S. Asayama, S. Yokogawa, K. Imai, and Y. Hayashi, "Direct observation of RTN-induced SRAM failure by accelerated testing and its application to product reliability assesment," in Symp. on VLSI Tech., 2010, p. 189.
- Symp. on VLSI Tech., 2010 , pp. 189
- Takeuchi, K.¹ Nagumo, T.² Takeda, K.³ Asayama, S.⁴ Yokogawa, S.⁵ Imai, K.⁶ Hayashi, Y.⁷

4
- 77951623133
- Reduction of RTS noise in small-area MOSFETs under switched bias conditions and forward substrate bias
- N. Zanolla, D. Siparak, M. Tiebout, P. Baumgartner, E. Sangiorgi, and C. Fiegna, "Reduction of RTS noise in small-area MOSFETs under switched bias conditions and forward substrate bias," IEEE Trans. Electron Devices, vol. 57, no. 5, p. 1119, 2010.
- (2010) IEEE Trans. Electron Devices , vol.57 , Issue.5 , pp. 1119
- Zanolla, N.¹ Siparak, D.² Tiebout, M.³ Baumgartner, P.⁴ Sangiorgi, E.⁵ Fiegna, C.⁶

5
- 21644451780
- Modeling of RTS noise in MOSFETs under steady-state and large signal excitation
- J. S. Kolhatkar, E. Hoekstra, C. Salm, A. P. van der Wel, E. A. M. Klumperink, J. Schmitz, and H. Wallinga, "Modeling of RTS noise in MOSFETs under steady-state and large signal excitation," in 2004 IEDM Tech. Dig., 2004, p. 759.
- 2004 IEDM Tech. Dig., 2004 , pp. 759
- Kolhatkar, J.S.¹ Hoekstra, E.² Salm, C.³ Van Der Wel, A.P.⁴ Klumperink, E.A.M.⁵ Schmitz, J.⁶ Wallinga, H.⁷

6
- 0042347566
- The decrease of "random telegraph signal" noise in meta-oxide-semiconductor field-effect transistors when cycled from inversion to accumulation
- B. Dierickx and E. Simoen, "The decrease of "random telegraph signal" noise in meta-oxide-semiconductor field-effect transistors when cycled from inversion to accumulation," J. Appl. Phys., vol. 71, no. 4, p. 2028, 1992.
- (1992) J. Appl. Phys. , vol.71 , Issue.4 , pp. 2028
- Dierickx, B.¹ Simoen, E.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.