NBTI lifetime prediction in sion p-MOSFETs by H/H2 reaction-diffusion(RD) and dispersive hole trapping model

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 1105-1114

  Deora, S ^a   Maheta, V D ^a   Mahapatra, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Hole trapping; Interface traps; NBTI; PNA; PNO; Reaction diffusion (RD) model; RTNO; SiON

Indexed keywords

HOLE TRAPPING; INTERFACE TRAPS; NBTI; PNA; PNO; REACTION DIFFUSION; RTNO; SION;

DIFFUSION IN LIQUIDS; EXTRAPOLATION; HOLE TRAPS; MOSFET DEVICES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957909758     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488665     Document Type: Conference Paper

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