On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 813-816

  Liu, W J ^a   Liu, Z Y ^a   Huang, Daming ^a   Liao, C C ^b   Zhang, L F ^b   Gan, Z H ^b   Wong, Waisum ^b   Shen, C ^c   Li, Ming Fu ^a,c  

^a FUDAN UNIVERSITY   (China)

^b SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; GATES (TRANSISTOR);

INTERFACE TRAP DENSITY; INTERFACE TRAPPING; ON-THE-FLY; ON-THE-FLY METHOD; P-MOSFETS;

ELECTRON DEVICES;

EID: 40549091473     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419072     Document Type: Conference Paper

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