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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 3, 2011, Pages

Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors

(16) Zhang, Xingui a Guo, Huaxin a Lin, Hau Yu b Cheng, Chao Ching b Ko, Chih Hsin b Wann, Clement H b Luo, Guang Li c Chang, Chun Yen d Chien, Chao Hsin c,d Han, Zong You d Huang, Shih Chiang c Chin, Hock Chun a Gong, Xiao a Koh, Shao Ming a Lim, Phyllis Shi Ya a Yeo, Yee Chia a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (Taiwan)

c NATIONAL NANO DEVICE LABORATORIES (Taiwan)

d NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC RESISTANCE; GALLIUM ALLOYS; GALLIUM ARSENIDE; GERMANIUM; MOSFET DEVICES; OHMIC CONTACTS; TRANSISTORS;

CONTACT METALLIZATION; CONTACT RESISTIVITIES; CONTACT TECHNOLOGIES; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; NICKEL GERMANOSILICIDE; SELF-ALIGNED; TWO-STEP ANNEALING;

VANADIUM;

EID: 79958097478 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3592211 Document Type: Article

Times cited : (11)

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