Ge and III/V devices for advanced CMOS

Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Volumn , Issue , 2009, Pages 83-86

  Heyns, Marc ^a,b   Adelmann, Christoph ^a   Brammertz, Guy ^a   Brunco, David ^a,c   Caymax, Matty ^a   De Jaeger, Brice ^a   Delabie, Annelies ^a   Eneman, Geert ^a   Houssa, Michel ^a,b   Lin, Dennis ^a,d   Martens, Koen ^a   Merckling, Clement ^a   Meuris, Marc ^a   Mittard, Jerome ^a   Penaud, Julien ^a,e   Pourtois, Geoffrey ^a   Scarrozza, Marco ^a   Simoen, Eddy ^a   Sioncke, Sonja ^a   Wang, Wei E ^a,c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c INTEL CORPORATION   (United States)

^d PURDUE UNIVERSITY   (United States)

^e Purdue University ^*

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED CMOS; CRITICAL ISSUES; GE SURFACES; PMOS DEVICES; SHORT CHANNELS;

GERMANIUM;

PASSIVATION;

EID: 67650685018     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2009.4897544     Document Type: Conference Paper

References (9)

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