Microstructural analysis of NilnGe ohmic contacts for n-type GaAs

Journal of Electronic Materials

Volumn 31, Issue 1, 2002, Pages 76-81

  Tsunoda, Yukito ^a   Murakami, Masanori ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Metal GaAs interface; N type GaAs; Ohmic contact

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); NICKEL COMPOUNDS; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; THERMODYNAMIC STABILITY;

METAL/GAAS INTERFACE; NIINGE CONTACTS; OHMIC CONTACT MATERIALS; SUBMICRON DEVICES;

MICROSTRUCTURE;

EID: 0242660537     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0176-6     Document Type: Article

References (12)

1. N. Braslau, J.B. Gunn, and J.L. Staple, Solid-State Electron. 10, 381 (1967).
2. M. Murakami, K.D. Childs, J.M. Baker, and A. Callegari, J. Vac. Sci. Technol. B4, 903 (1986).
3. Y.C. Shih, M. Murakami, E.L. Wilkie, and A. Callegari, J. Appl. Phys. 62, 582 (1987).
4. M. Murakami, Mater. Sci. Rep. 5, 273 (1990).
5. K. Tanahashi, H.J. Takata, A. Otuski, and M. Murakami, J. Appl. Phys. 72, 4183 (1992).
6. T. Oku, H. Wakimoto, A. Otsuki, and M. Murakami, J. Appl. Phys. 75, 2522 (1994).
7. K. Kajiyama, Y. Mizushima, and S. Sakata, Appl. Phys. Lett. 23, 458 (1973).
8. J.M. Woodall, J.L. Freeouf, G.D. Pettit, T. Jackson, and P. Kirchner, J. Vac. Sci. Tech. 19, 626 (1981).
9. M. Murakami, Y.C. Shih, W.H. Price, and E.L. Wilkie, J. Appl. Phys. 64, 1974 (1988).
10. J.M. Woodall, G.D. Pettit, T.N. Jackson, and C. Lanza, Phys. Rev. Lett. 51, 1783 (1983).
11. M. Okunishi, C.J. Uchibori, T. Oku, A. Otsuki, N. Ono, and M. Murakami, J. Elec. Mater. 24, 333 (1994).
12. H.H. Berger, Solid-State Electron. 15, 145 (1972).