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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 4, 2009, Pages 2036-2039

Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs

(9) Baraskar, Ashish K a Wistey, Mark A a Jain, Vibhor a Singisetti, Uttam a Burek, Greg a Thibeault, Brian J a Lee, Yong Ju b Gossard, Arthur C a Rodwell, Mark J W a

a University of California (United States)

b INTEL CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTIVITIES; HEAVILY DOPED; IN-SITU; INP; LATTICE-MATCHED; NONALLOYED OHMIC CONTACT; SI LAYER; SPECIFIC CONTACT RESISTIVITY; TRANSMISSION LINE MODELS;

ELECTRIC CONTACTORS; GALLIUM; MOLYBDENUM; OHMIC CONTACTS;

CARRIER CONCENTRATION;

EID: 68349127560 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3182737 Document Type: Article

Times cited : (48)

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