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Volumn 13, Issue 12, 2010, Pages

Fluorine incorporation in hfalo gate dielectric for defect passivation and effect on electrical characteristics of In0.53 Ga0.47 As n-MOSFETs

(4) Chin, Hock Chun a Gong, Xiao a Wang, Lanxiang a Yeo, Yee Chia a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BULK OXIDES; CHEMICAL VAPOR DEPOSITED; CONTROL DEVICE; DEFECT PASSIVATION; DRIVE CURRENTS; EFFECTIVE CARRIER MOBILITY; ELECTRICAL CHARACTERISTIC; F TREATMENT; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOSFETS; N-CHANNEL; NMOSFETS; PLASMA TREATMENT; POST-DEPOSITION ANNEAL; SUBTHRESHOLD CHARACTERISTICS;

CARRIER MOBILITY; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; FLUORINE; GATES (TRANSISTOR); MASS SPECTROMETRY; MOSFET DEVICES; ORGANOMETALLICS; PASSIVATION; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DIELECTRICS;

EID: 77958470643 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3489073 Document Type: Article

Times cited : (11)

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