Characterization of nickel germanide thin films for use as contacts to p-channel germanium MOSFETs

IEEE Electron Device Letters

Volumn 26, Issue 3, 2005, Pages 151-153

  Spann, John Y ^a   Anderson, Robert A ^a   Thornton, Trevor J ^a   Harris, Gari ^b   Thomas, Shawn G ^b   Tracy, Clarence ^c  

^a Arizona State University   (United States)

^b MOTOROLA INC   (United States)

^c FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Conductivity measurement; Germanium; MOSFETs

Indexed keywords

ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRON DIFFRACTION; GRAIN SIZE AND SHAPE; NICKEL COMPOUNDS; PHYSICAL PROPERTIES; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM; STOICHIOMETRY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION ELECTRON DIFFRACTION; NICKEL GERMANIDE; POLYCRYSTALLINE FILM;

MOSFET DEVICES;

EID: 15544387594     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.842653     Document Type: Article

References (15)

1. C. M. Ransom, T. N. Jackson, and J. F. Degelormo, "Self-aligned n-channel and p-channel germanium MOSFETs," IEEE Trans. Electron Devices, vol. 38, no. 12, pp. 2695-2695, Dec. 1991.
2. M. L. Lee, C. W. Leitz, Z. Cheng, A. J. Pitera, M. T. Curie, G. Taraschi, E. A. Fitzgerald, and D. A. Antoniadis, "Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on SiGe-Si substrates," Appl. Phys. Lett., vol. 79, pp. 3344-3346, 2001.
3. C. O. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, "Germanium MOS capacitors incorporating ultrathin high-Κ gate dielectric," IEEE Electron Device Lett., vol. 23, no. 5, pp. 473-475, May 2002.
4. H. Shang, H. Okorn-Schimdt, J. Ott, P. Kozlowski, S. Steen, E. C. Jones, H. S. P. Wong, and W. Hanesch, "Electrical characterization of germanium p-channel MOSFETs," IEEE Electron Device Lett., vol. 24, no. 3, pp. 242-244, Mar. 2003.
5. C. O. Chui, H. Kim, P. C. McIntyre, and K. C. Saraswat, "A germanium NMOSFET process integrating metal gate and improved Hi-k dielectrics," in IEDM Tech. Dig., 2003, pp. 437-440.
6. 0.7-Si," IEEE Electron Device Lett., vol. 23, no. 6, pp. 464-466, Jun. 2002.
7. http://www.genplot.com/RUMP/index.htm [Online]
8. J. Seger, S. L. Zhang, D. Mangelinck, and H. H. Radamson, "Increased nucleation temperature of NiSi2 in the reaction of Ni thin films with Si1-xGex," Appl. Phys. Lett., vol. 81, pp. 1978-1980, 2002.
9. F. Dheurle, C. S. Petersson, J. E. E. Baglin, S. J. Laplaca, and C. Y. Wong, "Formation of thin-films of Nisi - metastable structure, diffusion mechanisms in intermetallic compounds," J. Appl. Phys., vol. 55, pp. 4208-4218, 1984.
10. W. B. Pearson, The Crystal Chemistry and Physics of Metals and Alloys New York: Wiley, 1972.
11. x (x = 0.2, 0.3) at low temperature by rapid thermal annealing," J. Appl. Phys., vol. 92, pp. 214-217, 2002.
12. x contacts for VLSI applications," Electron. Lett., vol. 36, pp. 1819-1821, 2000.
13. S. P. Murarka, Silicides for VLSI Applications. New York: Academic, 1983.
14. D. K. Schroder, Semiconductor Material and Device Characterization Fourth ed. New York: Wiley, 1990.
15. 1-x films - dopant activation and solid solubility," J. Electrochem. Soc., vol. 144, pp. 3968-3973, 1997.